Drain Induced Barrier Lowering (DIBL) Effect | Non - ideal Effects of MOS Transistor | Energy Bands
6.3 هزار بار بازدید -
3 سال پیش
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This video on "DIBL Effect"
This video on "DIBL Effect" illustrates the difference between a long - channel and short - channel transistor. The energy bands in intrinsic and extrinsic semiconductor is explained to understand the band bending in NMOS device better. The drain bias variations are shown with energy band diagrams of NMOS transistor to visualize the source side barrier reduction in a short channel transistor.The potential barrier is now reduced due to drain bias, which allows more electrons to flow from source to drain.
Though at shorter gate lengths, the inversion of channel starts earlier, DIBL effect remains to be undesirable, as it lowers the threshold voltage of the device. The inversion of the channel becomes independent of the gate voltage and even when gate voltage is less than the threshold voltage, the current flows. Under this region the current flow should be negligible, but at shorter channel lengths, this occurs in a reverse manner, hence the DIBL effect has to be minimized without compromising the gate / channel lengths.
Short Channel Effects of MOS Transistor - Introduction
Short Channel Effects in MOS Transist...
#Velocity Saturation Effect of MOS Transistor
Velocity Saturation Effect | Short Ch...
NMOS Transistor - Regions of Operation:
NMOS Transistor - Regions of Operatio...
MOS Transistor - Ideal I - V Characteristics / Drain Current - Derivation - Part I
MOS Transistor - Ideal I - V Characte...
MOS Transistor - Ideal I - V Characteristics / Drain Current - Derivation - Part II
MOS Transistor - Ideal I - V Characte...
TimeCodes:
Introduction: (00:00)
Short - Channel Vs Long - Channel Transistor: (00:21)
Energy Band Diagram in Semiconductors: (02:44)
Long - Channel Transistor - NO DIBL Effect: (04:55)
Short - Channel FET - Illustrating DIBL Effect: (10:06)
Threshold Voltage Roll - Off with Channel Length: (13:04)
Though at shorter gate lengths, the inversion of channel starts earlier, DIBL effect remains to be undesirable, as it lowers the threshold voltage of the device. The inversion of the channel becomes independent of the gate voltage and even when gate voltage is less than the threshold voltage, the current flows. Under this region the current flow should be negligible, but at shorter channel lengths, this occurs in a reverse manner, hence the DIBL effect has to be minimized without compromising the gate / channel lengths.
Short Channel Effects of MOS Transistor - Introduction
Short Channel Effects in MOS Transist...
#Velocity Saturation Effect of MOS Transistor
Velocity Saturation Effect | Short Ch...
NMOS Transistor - Regions of Operation:
NMOS Transistor - Regions of Operatio...
MOS Transistor - Ideal I - V Characteristics / Drain Current - Derivation - Part I
MOS Transistor - Ideal I - V Characte...
MOS Transistor - Ideal I - V Characteristics / Drain Current - Derivation - Part II
MOS Transistor - Ideal I - V Characte...
TimeCodes:
Introduction: (00:00)
Short - Channel Vs Long - Channel Transistor: (00:21)
Energy Band Diagram in Semiconductors: (02:44)
Long - Channel Transistor - NO DIBL Effect: (04:55)
Short - Channel FET - Illustrating DIBL Effect: (10:06)
Threshold Voltage Roll - Off with Channel Length: (13:04)
3 سال پیش
در تاریخ 1400/05/25 منتشر شده
است.
6,350
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