What is gate induced drain leakage in MOSFET ? GIDL in MOSFET?

This video discusses the one the leakage currents which is dominant in MOS devices at lower technology nodes due to scaling of transistors. It happens due to thin oxide layer. It comprises of two phenomena namely electron and hole pair generation and Band to Band Tunneling due to increase in VDG(Drain to Gate voltage ).
1. GIDL happens when device is technically supposed to be in off state as Vgs is less than Vt , but in reality device leaks out some currents. One of the major contributor to this leakage current is GIDL.
2. GIDL increases static power consumption of the device.

Ways to reduce GIDL:
1. Increasing the permittivity of the oxide.
2. Adjusting the drain doping such that the band bending in the deep depletion region does not exceed the silicon band gap and electric field in Si does not exceed the critical electric field for Band to band tunneling ,can reduce GIDL.
3. Using Halo doping.

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