P-Channel Enhancement MOSFET Working #V-I Characteristics #Transfer Characteristics
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P channel Enhancement MOSFET is
P channel Enhancement MOSFET is a 3-terminal device.
The body of any P-channel MOSFET is made up of N-type material. 2 P-type materials are diffused at the top. A depletion region will be formed in the PN junction. A metal contact is made at the bottom of the N-type substrate and a terminal is taken out called the body or substrate.
P channel enhancement MOSFET is similar to N channel enhancement MOSFET, the only difference is in the polarities of applied voltages.
To get the drain current first we have to create a channel for the free movement of holes. To create a channel we have to apply a voltage between the gate and source terminal keeping Gate at a lower potential. This voltage is called VGS. Now the gate is at a lower potential. The free holes will move toward the gate terminal.
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