STS System DRIE - Standard Operating Procedures
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11 سال پیش
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View the SOP documentation
View the SOP documentation
http://www.inrf.uci.edu/sop-sts
The STS System DRIE system is designed to provide high aspect ratio etching of single crystal silicon using inductively coupled plasma (ICP) reactive ion etching (RIE). With Advanced Silicon Etch (ASE), licensed Bosch process, hundreds of micrometers thick of microstructures can be obtained up to ~20:1 aspect ratio. ICP RIE uses RF magnetic field to further excite electron cloud and reactive ions and increase density of ions and neutrals which increases etch rate. By combination of alternate SF6 etch and C4 F8 protection (deposition) process cycles with ICP RIE, high etch rate, high directionality silicon etch is realized.
Visit the STS System DRIE page:
http://www.inrf.uci.edu/sts-system-drie
http://www.inrf.uci.edu/sop-sts
The STS System DRIE system is designed to provide high aspect ratio etching of single crystal silicon using inductively coupled plasma (ICP) reactive ion etching (RIE). With Advanced Silicon Etch (ASE), licensed Bosch process, hundreds of micrometers thick of microstructures can be obtained up to ~20:1 aspect ratio. ICP RIE uses RF magnetic field to further excite electron cloud and reactive ions and increase density of ions and neutrals which increases etch rate. By combination of alternate SF6 etch and C4 F8 protection (deposition) process cycles with ICP RIE, high etch rate, high directionality silicon etch is realized.
Visit the STS System DRIE page:
http://www.inrf.uci.edu/sts-system-drie
11 سال پیش
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