EE Research Talk—Next generation memory technology: a Resistive Random-Access (ReRAM) Memory
12.5 هزار بار بازدید -
2 سال پیش
-
Electrical Engineering Research Talk featuring
Electrical Engineering Research Talk featuring Dr. Seungkeun Choi, associate professor and electrical engineering program coordinator, and Moosa, Master of Science in Electrical Engineering candidate, in the School of Science, Technology, Engineering & Mathematics at the University of Washington Bothell. In this research talk, Dr. Choi explains the fundamentals of a ReRAM device and presents the most recent outcomes researched by Moosa. This research talk is suitable for any undergraduate Electrical Engineering students or alumni.
Title: Next generation memory technology: a Resistive Random-Access (ReRAM) Memory
A resistive switching memory device is an emerging technology due to its fast switching operation, longer retention time, high storage density, and low power consumption. In addition, it has a very simple structure in which a resistive layer is sandwiched between two electrodes. Furthermore, capability of multilevel switching has drawn a great interest due to particularly the increasing demands for high-density data storage. Tunability of multilevel resistance states allows a single memory cell to save more than 2-bits of information, hence, enabling high density and miniaturization memory cell implementation.
Speaker: Seungkeun Choi, Ph.D., Associate Professor at UW Bothell
Dr. Choi received his Ph.D. in Electrical and Computer Engineering from the Georgia Institute of Technology in 2007 and worked at the Center for organic Photonics and Electronics in the same institute for 5 years. For his Ph.D., he developed a low-power consuming resonant magnetic sensor based on MEMS technology. He also developed a large-area organic solar cells and light-emitting diodes for his postdoc research. His current research focuses on the resistive switching memory devices, sensors based on organic electrochemical transistors, and organic solar cells. Dr. Choi joined UW Bothell in 2012 as an assistant professor and has served as a EE program coordinator since 2021.
Learn more about the Electrical Engineering programs at UW Bothell! https://www.uwb.edu/ee
Title: Next generation memory technology: a Resistive Random-Access (ReRAM) Memory
A resistive switching memory device is an emerging technology due to its fast switching operation, longer retention time, high storage density, and low power consumption. In addition, it has a very simple structure in which a resistive layer is sandwiched between two electrodes. Furthermore, capability of multilevel switching has drawn a great interest due to particularly the increasing demands for high-density data storage. Tunability of multilevel resistance states allows a single memory cell to save more than 2-bits of information, hence, enabling high density and miniaturization memory cell implementation.
Speaker: Seungkeun Choi, Ph.D., Associate Professor at UW Bothell
Dr. Choi received his Ph.D. in Electrical and Computer Engineering from the Georgia Institute of Technology in 2007 and worked at the Center for organic Photonics and Electronics in the same institute for 5 years. For his Ph.D., he developed a low-power consuming resonant magnetic sensor based on MEMS technology. He also developed a large-area organic solar cells and light-emitting diodes for his postdoc research. His current research focuses on the resistive switching memory devices, sensors based on organic electrochemical transistors, and organic solar cells. Dr. Choi joined UW Bothell in 2012 as an assistant professor and has served as a EE program coordinator since 2021.
Learn more about the Electrical Engineering programs at UW Bothell! https://www.uwb.edu/ee
2 سال پیش
در تاریخ 1401/02/08 منتشر شده
است.
12,526
بـار بازدید شده