Spotlight on Silicon Carbide (SiC) crystal growth

ROHM’s production facility SiCrystal, located in Nuremberg, Germany, supplies the EU market with SiC substrate. In our new video, Dr. Robert Eckstein, CEO of SiCrystal, explains the process of SiC crystal growth and outlines the substrate’s various key features.
Interested to explore more? Visit our PCIM landing page to discover our SiC product world and beyond: https://www.rohm.com/pcim